DARPA is offering the Nitride Electronic NeXt-Generation Technology (NEXT) Grant for innovative research proposals in advanced nitride electronics. The grant aims to support research that enables significant advancements in nitride electronic devices and integrated circuits, allowing them to operate at high frequencies with favorable voltage breakdown characteristics. This grant excludes research focused on incremental improvements. Proposal Due Date has been amended to Feb 24, 2009. For submission instructions and inquiries, contact BAA09-16@darpa.mil. Closing Date for submissions: Nov 19, 2009.
Opportunity ID: 43397
General Information
| Document Type: | Grants Notice |
| Funding Opportunity Number: | DARPA-BAA-09-16 |
| Funding Opportunity Title: | Nitride Electronic NeXt-Generation Technology (NEXT) |
| Opportunity Category: | Discretionary |
| Opportunity Category Explanation: | – |
| Funding Instrument Type: | Cooperative Agreement Grant Other Procurement Contract |
| Category of Funding Activity: | Science and Technology and other Research and Development |
| Category Explanation: | – |
| Expected Number of Awards: | – |
| Assistance Listings: | 12.910 — Research and Technology Development |
| Cost Sharing or Matching Requirement: | No |
| Version: | Synopsis 3 |
| Posted Date: | Nov 19, 2008 |
| Last Updated Date: | Jan 27, 2009 |
| Original Closing Date for Applications: | Nov 19, 2009 Dates Posting Date – November 19, 2008 Industry Day – December 3, 2008 Proposal Abstract Due Date – December 17, 2008 Proposal Due Date – February 17, 2009 |
| Current Closing Date for Applications: | Nov 19, 2009 Dates Posting Date – November 19, 2008 Industry Day – December 3, 2008 Proposal Abstract Due Date – December 19, 2008 Proposal Due Date – February 24, 2009 |
| Archive Date: | Dec 14, 2009 |
| Estimated Total Program Funding: | – |
| Award Ceiling: | $0 |
| Award Floor: | $0 |
Eligibility
| Eligible Applicants: | Unrestricted (i.e., open to any type of entity above), subject to any clarification in text field entitled “Additional Information on Eligibility” |
| Additional Information on Eligibility: | – |
Additional Information
| Agency Name: | DARPA – Microsystems Technology Office |
| Description: | Amendment 01: The purpose of this amendment is to revise the Proposal Due Date to 24 Feb 09. See the full conform BAA document attached (changes highlighted in yellow).Original Notice Below.DARPA is soliciting innovative research proposals in the area of advanced nitride electronics. Proposed research should investigate innovative approaches that enable revolutionary advances in nitride electronic devices and integrated circuits resulting in their ability to operate at very high frequencies while maintaining extremely favorable voltage breakdown characteristics. Specifically excluded is research that primarily results in evolutionary improvements to the existing state of practice. Full BAA document attached.All administrative correspondence and questions on this solicitation, including requests for information on how to submit a proposal abstract or full proposal to this BAA, should be directed to BAA09-16@darpa.mil. |
| Link to Additional Information: | DARPA MTO Solicitations page |
| Grantor Contact Information: | If you have difficulty accessing the full announcement electronically, please contact:
Dr. Mark Rosker
mark.rosker@darpa.mil DARPA/MTO ATTN: BAA 09-16 3701 North Fairfax Drive Arlington, VA 22203-1714 Email:BAA09-16@darpa.mil |
Version History
| Version | Modification Description | Updated Date |
|---|---|---|
| Full proposal due date revised to 24 Feb 09. | Jan 27, 2009 | |
| Abstract due date changed to 19 Dec 08. | Jan 27, 2009 | |
| Dec 15, 2008 |
DISPLAYING: Synopsis 3
General Information
| Document Type: | Grants Notice |
| Funding Opportunity Number: | DARPA-BAA-09-16 |
| Funding Opportunity Title: | Nitride Electronic NeXt-Generation Technology (NEXT) |
| Opportunity Category: | Discretionary |
| Opportunity Category Explanation: | – |
| Funding Instrument Type: | Cooperative Agreement Grant Other Procurement Contract |
| Category of Funding Activity: | Science and Technology and other Research and Development |
| Category Explanation: | – |
| Expected Number of Awards: | – |
| Assistance Listings: | 12.910 — Research and Technology Development |
| Cost Sharing or Matching Requirement: | No |
| Version: | Synopsis 3 |
| Posted Date: | Nov 19, 2008 |
| Last Updated Date: | Jan 27, 2009 |
| Original Closing Date for Applications: | Nov 19, 2009 Dates Posting Date – November 19, 2008 Industry Day – December 3, 2008 Proposal Abstract Due Date – December 17, 2008 Proposal Due Date – February 17, 2009 |
| Current Closing Date for Applications: | Nov 19, 2009 Dates Posting Date – November 19, 2008 Industry Day – December 3, 2008 Proposal Abstract Due Date – December 19, 2008 Proposal Due Date – February 24, 2009 |
| Archive Date: | Dec 14, 2009 |
| Estimated Total Program Funding: | – |
| Award Ceiling: | $0 |
| Award Floor: | $0 |
Eligibility
| Eligible Applicants: | Unrestricted (i.e., open to any type of entity above), subject to any clarification in text field entitled “Additional Information on Eligibility” |
| Additional Information on Eligibility: | – |
Additional Information
| Agency Name: | DARPA – Microsystems Technology Office |
| Description: | Amendment 01: The purpose of this amendment is to revise the Proposal Due Date to 24 Feb 09. See the full conform BAA document attached (changes highlighted in yellow).Original Notice Below.DARPA is soliciting innovative research proposals in the area of advanced nitride electronics. Proposed research should investigate innovative approaches that enable revolutionary advances in nitride electronic devices and integrated circuits resulting in their ability to operate at very high frequencies while maintaining extremely favorable voltage breakdown characteristics. Specifically excluded is research that primarily results in evolutionary improvements to the existing state of practice. Full BAA document attached.All administrative correspondence and questions on this solicitation, including requests for information on how to submit a proposal abstract or full proposal to this BAA, should be directed to BAA09-16@darpa.mil. |
| Link to Additional Information: | DARPA MTO Solicitations page |
| Grantor Contact Information: | If you have difficulty accessing the full announcement electronically, please contact:
Dr. Mark Rosker
mark.rosker@darpa.mil DARPA/MTO ATTN: BAA 09-16 3701 North Fairfax Drive Arlington, VA 22203-1714 Email:BAA09-16@darpa.mil |
DISPLAYING: Synopsis 2
General Information
| Document Type: | Grants Notice |
| Funding Opportunity Number: | DARPA-BAA-09-16 |
| Funding Opportunity Title: | Nitride Electronic NeXt-Generation Technology (NEXT) |
| Opportunity Category: | Discretionary |
| Opportunity Category Explanation: | – |
| Funding Instrument Type: | Cooperative Agreement Grant Other Procurement Contract |
| Category of Funding Activity: | Science and Technology and other Research and Development |
| Category Explanation: | – |
| Expected Number of Awards: | – |
| Assistance Listings: | 12.910 — Research and Technology Development |
| Cost Sharing or Matching Requirement: | No |
| Version: | Synopsis 2 |
| Posted Date: | Jan 27, 2009 |
| Last Updated Date: | – |
| Original Closing Date for Applications: | – |
| Current Closing Date for Applications: | Nov 19, 2009 Dates Posting Date – November 19, 2008 Industry Day – December 3, 2008 Proposal Abstract Due Date – December 19, 2008 Proposal Due Date – February 17, 2009 |
| Archive Date: | Dec 14, 2009 |
| Estimated Total Program Funding: | – |
| Award Ceiling: | $0 |
| Award Floor: | $0 |
Eligibility
| Eligible Applicants: | Unrestricted (i.e., open to any type of entity above), subject to any clarification in text field entitled “Additional Information on Eligibility” |
| Additional Information on Eligibility: | – |
Additional Information
| Agency Name: | DARPA – Microsystems Technology Office |
| Description: | Amendment 01: The purpose of this amendment is to revise the Abstract Due Date to 19 Dec 08. See the full conform BAA document attached (changes highlighted in yellow).
Original Notice Below. |
| Link to Additional Information: | DARPA MTO Solicitations page |
| Grantor Contact Information: | If you have difficulty accessing the full announcement electronically, please contact:
Dr. Mark Rosker
mark.rosker@darpa.mil DARPA/MTO ATTN: BAA 09-16 3701 North Fairfax Drive Arlington, VA 22203-1714 Email:BAA09-16@darpa.mil |
DISPLAYING: Synopsis 1
General Information
| Document Type: | Grants Notice |
| Funding Opportunity Number: | DARPA-BAA-09-16 |
| Funding Opportunity Title: | Nitride Electronic NeXt-Generation Technology (NEXT) |
| Opportunity Category: | Discretionary |
| Opportunity Category Explanation: | – |
| Funding Instrument Type: | Cooperative Agreement Grant Other Procurement Contract |
| Category of Funding Activity: | Science and Technology and other Research and Development |
| Category Explanation: | – |
| Expected Number of Awards: | – |
| Assistance Listings: | 12.910 — Research and Technology Development |
| Cost Sharing or Matching Requirement: | No |
| Version: | Synopsis 1 |
| Posted Date: | Dec 15, 2008 |
| Last Updated Date: | – |
| Original Closing Date for Applications: | – |
| Current Closing Date for Applications: | Nov 19, 2009 Dates Posting Date – November 19, 2008 Industry Day – December 3, 2008 Proposal Abstract Due Date – December 17, 2008 Proposal Due Date – February 17, 2009 |
| Archive Date: | Dec 14, 2009 |
| Estimated Total Program Funding: | – |
| Award Ceiling: | $0 |
| Award Floor: | $0 |
Eligibility
| Eligible Applicants: | Unrestricted (i.e., open to any type of entity above), subject to any clarification in text field entitled “Additional Information on Eligibility” |
| Additional Information on Eligibility: | – |
Additional Information
| Agency Name: | DARPA – Microsystems Technology Office |
| Description: | DARPA is soliciting innovative research proposals in the area of advanced nitride electronics. Proposed research should investigate innovative approaches that enable revolutionary advances in nitride electronic devices and integrated circuits resulting in their ability to operate at very high frequencies while maintaining extremely favorable voltage breakdown characteristics. Specifically excluded is research that primarily results in evolutionary improvements to the existing state of practice. Full BAA document attached.
All administrative correspondence and questions on this solicitation, including requests for information on how to submit a proposal abstract or full proposal to this BAA, should be directed to BAA09-16@darpa.mil. |
| Link to Additional Information: | DARPA MTO Solicitations page |
| Grantor Contact Information: | If you have difficulty accessing the full announcement electronically, please contact:
Dr. Mark Rosker
mark.rosker@darpa.mil DARPA/MTO ATTN: BAA 09-16 3701 North Fairfax Drive Arlington, VA 22203-1714 Email:BAA09-16@darpa.mil |
Related Documents
Folder 43397 Full Announcement-1 -> DARPA-BAA-09-16_NEXT_Final For Posting (2)_18Nov08.pdf
Folder 43397 Full Announcement-2 -> DARPA-BAA-09-16_NEXT_Amendment 01_ Final For Posting_15Dec08.pdf
Folder 43397 Full Announcement-3 -> DARPA-BAA-09-16_NEXT_Amendment 02_ Final For Posting_27 Jan 09.pdf
Packages
| Agency Contact Information: | Dr. Mark Rosker mark.rosker@darpa.mil DARPA/MTO ATTN: BAA 09-16 3701 North Fairfax Drive Arlington, VA 22203-1714 Email: BAA09-16@darpa.mil |
| Who Can Apply: | Organization Applicants |
| Assistance Listing Number | Competition ID | Competition Title | Opportunity Package ID | Opening Date | Closing Date | Actions |
|---|---|---|---|---|---|---|
| 12.910 | PKG00008827 | Nov 19, 2008 | Nov 19, 2009 | View |
Package 1
Mandatory forms
43397 RR_SF424-1.1.pdf
Optional forms
43397 RR_FedNonFedBudget-1.1.pdf
43397 RR_FedNonFed_SubawardBudget-1.2.pdf
43397 RR_OtherProjectInfo-1.1.pdf
43397 RR_Budget-1.1.pdf
43397 RR_KeyPersonExpanded-1.1.pdf
43397 RR_PerformanceSite-1.1.pdf
43397 RR_SubawardBudget-1.2.pdf
Leave a Reply